2SK2611 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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2SK2611 Datasheet PDF : 7 Pages
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Features
� 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V
� Ultra-low Gate charge(Typical 43nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
2SK2611
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology. this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC power Converters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD
Total Power Dissipation(@Tc=25℃)
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
11
7
44
±30
670
19.5
4.5
195
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
0.64
℃/W
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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