13001 データシートの表示（PDF） - Elite Enterprises
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13001 Datasheet PDF : 1 Pages
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13001
NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO= 400V
Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
600
V
400
V
7
V
200
mA
1000
mW
150
oC
-55~+150 oC
1. Emitter 2. Collector 3. Base
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Min
Collector-Base Breakdown Voltage
BVCBO IC=100µA, IE=0
600
Collector-Emitter Breakdown Voltage
BVCEO IC=1mA, IB=0
400
Emitter-Base Breakdown Voltage
BVEBO IE=100µA, IC=0
7
Collector Cut-off Current
ICBO VCB=600V, IE=0
Collector Cut-off Current
ICEO VCE=400V, IB=0
Emitter Cut-off Current
IEBO VEB=7V, IC=0
DC Current Gain
hFE(1) VCE=20V, IC=20mA
10
hFE(2) VCE=10V, IC=0.25mA
5
Collector-Emitter Saturation Voltage
VCE(sat) IC=50mA, IB=10mA
Base-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=10mA
Base-emitter Voltage
VBE IE= 100mA
Transition Frequency
ff
VCE=20V, IC=20mA
f=1MHz
8
Fall Time
Storage Time
tf
IC=50mA, IB1=-1B2=5mA,
ts
Vcc= 45V
Max
100
200
100
40
0.5
1.2
1.1
0.3
1.5
Unit
V
V
V
μA
μA
μA
V
V
V
MHz
µS
µS
hFE(1) CLASSIFICATION
Classification
hFE(1)
10-15
15-20
20-25
25-30
30-35
35-40
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk
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Part No.: 13001
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