2SK2698 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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2SK2698 Datasheet PDF : 7 Pages
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Features
� 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V
� Ultra-low Gate charge(Typical 42nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
2SK2698
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
AC-DC switching power supplies, DC-DC powerConverters high
voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD
Total Power Dissipation(@Tc=25℃)
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
18
12.7
80
±30
330
27.7
4.5
280
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
0.45
℃/W
-
0.24
-
℃/W
-
-
40
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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