2SB1274 データシートの表示（PDF） - Inchange Semiconductor
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2SB1274 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1274
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1913
·High reliability.
·High breakdown voltage
·Low saturation voltage.
·Wide area of safe operation
APPLICATIONS
·60V/3A low-frequency power amplifier
·General power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
体 3
Base
Fig.1 simplified outline (TO-220F) and symbol
固I电NC半H导ANGE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
CONDITIONS
Open emitter
VALUE
-60
UNIT
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-3
A
ICM
Collector current-peak
-8
A
PC
Collector dissipation
TC=25℃
20
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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