STN1A60S データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd

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STN1A60S

Logic Level Bi-Directional Triode Thyristor

Shenzhen Winsemi Microelectronics Co., Ltd 

STN1A60S

Electrical Characteristics (TJ = 25°C unless otherwise specified)

Symbol

IDRM

Characteristics

Peak Forward or Reverse Blocking Current

(VD= VDRM/VRRM,gate open)

TJ=25℃

TJ=125℃

VTM

Forward “On” Voltage (ITM = 1.5 A)

Gate Trigger Current (Continuous dc)

IGT

(VD = 12 Vdc, RL = 33 Ω)

VGT

Gate Trigger Voltage (Continuous dc)

(VD =12 Vdc, RL = 33 Ω)

(Note2)

T2+G+

T2+G-

T2-G-

T2-G+

T2+G+

T2+G-

T2-G-

T2-G+

VGD

Gate threshold voltage(TJ=125℃, VD=VDRM,RL=3.3KΩ)

Min Typ. Max Unit

-

-

-

-

5

500

μA

-

1.2 1.5

V

-

0.4

5

-

-

1.3

3

5

5

mA

-

3.8

7

-

-

1.2

-

-

-

-

1.2

1.2

V

-

-

1.5

0.2

-

-

V

dV/dt

IH

IL

Rd

Critical rate of rise of commutation Voltage (VD=0.67VDRM,gate open)

10

20

- V/μs

Holding Current

(VD =12 V, IGT = 100 mA)

latching current (VD = 12 V; IGT = 100 mA)

Dynamic resistance (TJ=125℃)

T2+G+

T2+G-

T2-G-

T2-G+

-

1.3

5

mA

-

1.2

5

-

-

4.0

1.0

8

5

mA

-

2.5

8

-

-

420 mΩ

Note 2. Forward current applied for 1 ms maximum duration, duty cycle

2/5

Steady, keep you advance

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