FSFR1800HS データシートの表示（PDF） - Fairchild Semiconductor

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FSFR1800HS

Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Fairchild Semiconductor 

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In

addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only.

Symbol

Parameter

Min.

Max.

Unit

VDS

LVCC

HVCC to CTR

HVCC

VRT

VLS

VCS

fsw

dVCTR/dt

PD

TJ

Maximum Drain-to-Source Voltage (DL-CTR and CTR-PG)

Low-Side Supply Voltage

High-Side VCC Pin to Low-Side Drain Voltage

High-Side Floating Supply Voltage

Timing Resistor Connecting and Auto-Restart Pin Voltage

Line Sensing Input Voltage

Current Sense (CS) Pin Input Voltage

Recommended Switching Frequency

Allowable Low-Side MOSFET Drain Voltage Slew Rate

Total Power Dissipation(4)

FSFR1800HS/L

FSFR1700HS/L

Maximum Junction Temperature(5)

Recommended Operating Junction Temperature(5)

500

V

-0.3

25.0

V

-0.3

25.0

V

-0.3

525.0

V

-0.3

5.0

V

-0.3

LVCC

V

-5

1

V

10

600

kHz

50

V/ns

11.7

W

11.6

+150

-40

+130

C

TSTG

Storage Temperature Range

-55

+150

C

MOSFET Section

VDGR

VGS

IDM

Drain Gate Voltage (RGS=1M)

Gate Source (GND) Voltage

Drain Current Pulsed(6)

FSFR1800HS/L

FSFR1700HS/L

500

V

±30

V

23

A

20

FSFR1800HS/L TC=25C

ID

Continuous Drain Current

TC=100C

FSFR1700HS/L TC=25C

TC=100C

7.0

4.5

A

6.0

3.9

Package Section

Torque Recommended Screw Torque

5~7

kgf·cm

Notes:

3. These parameters, although guaranteed, are tested only in EDS (wafer test) process.

4. Per MOSFET when both MOSFETs are conducting.

5. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

6. Pulse width is limited by maximum junction temperature.

Thermal Impedance

TA=25°C unless otherwise specified.

Symbol

Parameter

θJC

Junction-to-Case Center Thermal Impedance

(Both MOSFETs Conducting)

FSFR1800HS/L

FSFR1700HS/L

© 2011 Fairchild Semiconductor Corporation

FSFR1800 / FSFR1700-HS • Rev.1.0.0

4

Value

10.7

10.8

Unit

ºC/W

www.fairchildsemi.com

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