FSFR1700US データシートの表示（PDF） - Fairchild Semiconductor

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FSFR1700US

Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Fairchild Semiconductor 

Absolute Maximum Ratings (Continued)

Symbol

Parameter

MOSFET Section

VDGR

VGS

IDM

Drain Gate Voltage (RGS=1MΩ)

Gate Source (GND) Voltage

Drain Current Pulsed(5)

FSFR2100US/L

FSFR1800US/L

FSFR1700US/L

TC=25°C

FSFR2100US/L

TC=100°C

TC=25°C

ID

Continuous Drain Current FSFR1800US/L

TC=100°C

Package Section

TC=25°C

FSFR1700US/L

TC=100°C

Torque Recommended Screw Torque

Notes:

5. Pulse width is limited by maximum junction temperature.

Min.

Max.

500

±30

32

23

20

10.5

6.5

7.0

4.5

6.0

3.9

5~7

Unit

V

V

A

A

kgf·cm

Thermal Impedance

TA=25°C unless otherwise specified.

Symbol

Parameter

θJC

Junction-to-Case Center Thermal Impedance

(Both MOSFETs Conducting)

FSFR2100US/L

FSFR1800US/L

FSFR1700US/L

Value

10.44

10.68

10.79

Unit

ºC/W

© 2009 Fairchild Semiconductor Corporation

FSFR-US Series • Rev.1.0.2

5

www.fairchildsemi.com

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