FSFR1800US データシートの表示（PDF） - Fairchild Semiconductor

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FSFR1800US

Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Fairchild Semiconductor 

Electrical Characteristics

TA=25°C unless otherwise specified.

Symbol

Parameter

Test Conditions

MOSFET Section

BVDSS

Drain-to-Source Breakdown Voltage

ID=200μA, TA=25°C

ID=200μA, TA=125°C

FSFR2100US/L VGS=10V, ID=6.0A

RDS(ON) On-State Resistance FSFR1800US/L VGS=10V, ID=3.0A

FSFR1700US/L VGS=10V, ID=2.0A

FSFR2100US/L

VGS=0V, IDiode=12.0A,

dIDiode/dt=100A/μs

trr

Body Diode Reverse

Recovery Time(6)

FSFR1800US/L

VGS=0V, IDiode=7.0A,

dIDiode/dt=100A/μs

FSFR1700US/L

VGS=0V, IDiode=6.0A,

dIDiode/dt=100A/μs

Supply Section

ILK

IQHVCC

IQLVCC

IOHVCC

Offset Supply Leakage Current

Quiescent HVCC Supply Current

Quiescent LVCC Supply Current

Operating HVCC Supply Current

(RMS Value)

H-VCC=VCTR=500V

(HVCCUV+) - 0.1V

(LVCCUV+) - 0.1V

fOSC=100KHz

No Switching

IOLVCC

Operating LVCC Supply Current

(RMS Value)

fOSC=100KHz

No Switching

UVLO Section

LVCCUV+

LVCCUV-

LVCCUVH

HVCCUV+

HVCCUV-

HVCCUVH

LVCC Supply Under-Voltage Positive Going Threshold (LVCC Start)

LVCC Supply Under-Voltage Negative Going Threshold (LVCC Stop)

LVCC Supply Under-Voltage Hysteresis

HVCC Supply Under-Voltage Positive Going Threshold (HVCC Start)

HVCC Supply Under-Voltage Negative Going Threshold (HVCC Stop)

HVCC Supply Under-Voltage Hysteresis

Specifications

Unit

Min. Typ. Max.

500

V

540

0.41 0.51

0.77 0.95 Ω

1.00 1.25

120

160

ns

160

50

μA

50 120 μA

100 200 μA

6

9

mA

100 200 μA

7

11 mA

2

4

mA

11.2 12.5 13.8 V

8.90 10.0 11.1 V

2.50

V

8.2 9.2 10.2 V

7.8 8.7 9.6

V

0.5

V

© 2009 Fairchild Semiconductor Corporation

FSFR-US Series • Rev.1.0.2

6

www.fairchildsemi.com

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