FSFR1800L データシートの表示（PDF） - Fairchild Semiconductor
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FSFR1800L Datasheet PDF : 18 Pages
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Electrical Characteristics
TA=25°C unless otherwise specified.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
MOSFET Section
BVDSS
Drain-to-Source Breakdown Voltage
ID=200μA, TA=25°C
ID=200μA, TA=125°C
FSFR2100U VGS=10V, ID=6.0A
FSFR2000 VGS=10V, ID=5.0A
RDS(ON)
On-State Resistance
FSFR1900
FSFR1800
VGS=10V, ID=4.0A
VGS=10V, ID=3.0A
FSFR1700 VGS=10V, ID=2.0A
FSFR1600 VGS=10V, ID=2.25A
dIDiode/dt=100A/μs
FSFR2100U VGS=0V, IDiode=12.0A
FSFR2000 VGS=0V, IDiode=9.5A
trr
Body Diode Reverse
Recovery Time(6)
FSFR1900 VGS=0V, IDiode=8.0A
FSFR1800 VGS=0V, IDiode=7.0A
FSFR1700 VGS=0V, IDiode=6.0A
FSFR1600 VGS=0V, IDiode=5.0A
Supply Section
ILK
IQHVCC
IQLVCC
IOHVCC
Offset Supply Leakage Current
Quiescent HVCC Supply Current
Quiescent LVCC Supply Current
Operating HVCC Supply Current
(RMS Value)
IOLVCC
Operating LVCC Supply Current
(RMS Value)
H-VCC=VCTR=600V/500V
(HVCCUV+) - 0.1V
(LVCCUV+) - 0.1V
fOSC=100KHz, VCON > 0.6V
No Switching, VCON < 0.4V
fOSC=100KHz, VCON > 0.6V
No Switching, VCON < 0.4V
500
V
540
0.41 0.51
0.53 0.67
0.74 0.85
Ω
0.77 0.95
1.00 1.25
1.25 1.55
120
125
140
ns
160
160
65
50
μA
50 120 μA
100 200 μA
6
9
mA
100 200 μA
7
11 mA
2
4
mA
Continued on the following page…
© 2007 Fairchild Semiconductor Corporation
FSFR series Rev.1.0.9
6
www.fairchildsemi.com
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