2SC5820 データシートの表示（PDF） - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SC5820
Hitachi -> Renesas Electronics
2SC5820 Datasheet PDF : 12 Pages
| |||
2SC5820
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Ratings
12
4.0
1.5
35
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Symbol Min
ICBO
ICEO
IEBO
hFE
70
Cob
fT
17
Power gain
PG
13
Noise figure
NF
3rd. Order Intercept Point
IP3
Typ
110
0.3
20
17.5
1.15
10
Max
1
1
10
150
0.6
1.7
Unit
µA
µA
µA
pF
GHz
dB
dB
dBm
Test conditions
VCB = 12 V, IE = 0
VCE = 4 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 2 V, IC = 20 mA
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 2 V, IC = 30 mA
f = 2 GHz
VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
Rev.1, Nov. 2002, page 2 of 12
Share Link: