PIMD3 データシートの表示（PDF） - NXP Semiconductors.
部品番号
コンポーネント説明
メーカー
PIMD3 Datasheet PDF : 11 Pages
| |||
NXP Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT457
SOT666
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT457
SOT666
Min Typ Max
[1] -
-
625
[2] -
-
417
[1][3] -
-
625
[1] -
-
416
[2] -
-
208
[1][3] -
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
-
-
1
μA
-
-
50 μA
-
-
400 μA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
30 -
-
-
-
150 mV
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 μA
on-state input voltage VCE = 0.3 V; IC = 10 mA
bias resistor 1 (input)
-
1.1 0.8 V
2.5 1.8 -
V
7
10 13 kΩ
R2/R1 bias resistor ratio
0.8 1
1.2
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
-
-
f = 1 MHz
TR1 (NPN)
-
-
2.5 pF
TR2 (PNP)
-
-
3
pF
PEMD3_PIMD3_PUMD3_10
Product data sheet
Rev. 10 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 11
Share Link: 