BLW60C データシートの表示（PDF） - New Jersey Semiconductor
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BLW60C Datasheet PDF : 3 Pages
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VHP power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
'C(AV)
'CM
Prf
Tstg
Ti
BLW60C
max.
max.
max.
max.
max.
max.
-65 to +
max.
36 V
16 V
4V
9A
22 A
100 W
150 °C
200 °C
MGP47S
102
"c
(A)
10
"^ s
"" s"
k
' h 70 °C X s •^Xjinb
°C
.\
\ 25
1
10
VCE(V)
102
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 40 W; Tmb = 88 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
MCP480
150
Prf
(W)
100
•^ --^
in
—^ -->.
•**+,
' — ~.
•*-»» .^derate by (].52\>NIK. \---^
-- --. •--, ii
50
•*-*.
i
).38 NIK * *•" «
•^,
0
C)
50
Th(.c)
100
I Confirmous d.c. operation
II Continuous r.f. operation
IllShort-ti ne operation during mismatch
Fig.3 Fl.F. power dissipation; VCE ^ 16,5 V; f > MHz.
th j-mb(dc)
(h J-mb(rf)
th mb-h
2,8 K/W
2,05 K/W
0,45 K/W
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