T830T-8FP データシートの表示（PDF） - STMicroelectronics
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T830T-8FP Datasheet PDF : 9 Pages
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Characteristics
T830-8FP
Figure 5.
Relative variation of gate trigger
current versus junction
temperature (typical values)
IGT[Tj] / IGT[Tj = 25 °C]
2.0
IGT Q3
1.5
IGT Q2
IGT Q1
1.0
Figure 6.
Relative variation of gate trigger
voltage versus junction
temperature (typical values)
VGT[Tj] / VGT[Tj = 25 °C]
1.5
1.0
0.5
0.5
TC(°C)
TC(°C)
0.0
0.0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Figure 7.
Relative variation of holding and
latching current versus junction
temperature (typical values)
1.6 IH, IL[Tj] / IH, IL[Tj = 25 °C]
IL
1.2
IH
0.8
Figure 8. Surge peak on-state current versus
number of cycles
100 ITSM(A)
50
Non repetitive
Tj initial = 25 °C
t = 20 ms
One cycle
0.4
Repetitive
Tj(°C)
Tc = 95 °C
0.0
0
-50
-25
0
25
50
75
100
125
1
10
Number of cycles
100
1000
Figure 9.
Non repetitive surge peak on-state Figure 10. On-state characteristics (maximum
current and corresponding value of
I2T
values)
10000 ITSM(A), I²t (A²s)
Tj initial = 25 °C
100 ITM(A)
dl/dt limitation: 100 A / µs
1000
ITSM
100
I²t
10
Tj=125°C
Tj=25°C
Tjmax:
Vto = 0.85 V
Rd = 40 mΩ
sinusoidal pulse with width tp<10 ms
10
tp(ms)
1
VTM(V)
0.01
0.10
1.00
10.00
0
1
2
3
4
5
4/9
Doc ID 023366 Rev 1
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