TIP41C
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
Pulse
IC
6
A
10
A
Base Current
IB
2
A
TO-220
TC=25°C TO-220F
Collector Dissipation
TO-220
PC
TA=25°C TO-220F
65
W
22
2
W
0.7
Junction Temperature
Storage Temperature
TJ
TSTG
150
°C
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Emitter Sustaining Voltage (Note)
Collector Cutoff Current
VCEO
ICEO
IC=30mA, IB=0
VCE=60V, IB=0
Collector Cutoff Current
Emitter Cutoff Current
ICES VCE=100V, VEB=0
IEBO VEB=5V, IC=0
Collector-Emitter Saturation Voltage (Note)
Base-Emitter On Voltage (Note)
VCE(SAT) IC=6A, IB=600mA
VBE(ON) IC=6A, VCE=4V
DC Current Gain (Note)
hFE1
hFE2
IC=300mA, VCE=4V
IC=3A, VCE=4V
Current Gain Bandwidth Product
fT
Note: Pulse Test: PW≦300μs, Duty Cycle≦2%
VCE=10V, IC=500mA, f=1MHz
MIN TYP MAX UNIT
100
V
0.7 mA
400 μA
1 mA
1.5 V
2.0 V
30
15
75
3
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-008.D