SI4435DY データシートの表示（PDF） - Vishay Semiconductors
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SI4435DY Datasheet PDF : 5 Pages
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Si4435DY
Vishay Siliconix
TYPICAL CHARACTERISTICS, PRODUCT REVISION A (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
TJ = 150_C
10
0.06
TJ = 25_C
0.04
0.02
ID = 8.0 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.8
0.00
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
80
0.6
60
0.4
ID = 250 µA
0.2
40
–0.0
–0.2
20
–0.4
–0.6
–50 –25
2
0 25 50 75 100 125 150
0
0.01
0.10
1.00
TJ – Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10.00
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70149.
www.vishay.com
4
Document Number: 70149
S-51472—Rev. G, 01-Aug-05
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