BUL54ASMD データシートの表示（PDF） - Semelab - > TT Electronics plc

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BUL54ASMD

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Semelab - > TT Electronics plc  

BUL54ASMD

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

ELECTRICAL CHARACTERISTICS

VCEO(sus)*

V(BR)CBO*

V(BR)EBO*

ICEO*

ICBO*

Collector – Emitter Sustaining Voltage

Collector – Base Breakdown Voltage

Emitter – Base Breakdown Voltage

Collector – Emitter Cut–Off Current

Collector – Base Cut–Off Current

IC = 100mA

IC = 1mA

IE = 1mA

IB = 0

IE = 0

IEBO*

Emitter Cut–Off Current

IC = 0

hFE*

DC Current Gain

IC = 100mA

IC = 500mA

IC = 1A

VCE(sat)*

VBE(sat)*

VBE(on)*

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Base – Emitter On Voltage

IC = 100mA

IC = 500mA

IC = 1A

IC = 500mA

IC = 1A

IC = 500mA

IC = 0

VCC = 500V

VCB = 1000V

TC = 125°C

VEB = 5V

TC = 125°C

VCE = 4V

VCE = 4V

VCE = 4V

TC = 125°C

IB = 20mA

IB = 100mA

IB = 200mA

IB = 100mA

IB = 200mA

VCE = 4V

500

1000

10

20

12

5

4

DYNAMIC CHARACTERISTICS

fT

Transition Frequency

IC = 100mA

f = 10MHz

VCE = 4V

Cob

Output Capacitance

VCB = 20V

IE = 0

f = 1MHz

SECOND BREAKDOWN

IS/B

Second Breakdown Collector Current VCE = 50V t = 1s

0.8

SWITCHING CHARACTERISTICS (resistive load)

ton

On Time

ts

Storage Time

tf

Fall Time

VCC = 150V

IB1 = 0.2A

IC = 1A

IB2 = –0.4A

* Pulse test tp = 300ms , d £ 2%

Typ.

40

18

8

7

0.05

0.15

0.3

0.8

0.9

0.8

20

20

0.08

2

0.04

Max. Unit

V

100

mA

10

mA

100

10

mA

100

—

0.1

0.2

V

0.5

1.0

V

1.1

1.0

V

MHz

35

pF

A

0.2

4

ms

0.1

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 7/00

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