Die Characteristics
DIE DIMENSIONS:
77 mils x 81 mils x 19 mils
1960µm x 2060µm x 483µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ±2kÅ
Metallization Mask Layout
BAL
-IN
HA-2842
PASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ±2kÅ
Nitride thickness: 3.5kÅ ±1kÅ
SUBSTRATE POTENTIAL (POWERED UP):
V-
TRANSISTOR COUNT:
58
PROCESS:
High Frequency Bipolar Dielectric Isolation
HA-2842
BAL
COMP
V+
+IN
V-
OUT
9