2SC940 データシートの表示（PDF） - Inchange Semiconductor
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2SC940 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC940
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
90
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=90V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1 mA
hFE
DC current gain
IC=5A ; VCE=5V
15
70
fT
Transition frequency
IC=0.5A ; VCE=10V
20
MHz
固I电NC半H导A体NGE SEMICONDUCTOR hFE-2 Classifications
O
Q
15-35
25-45
P
35-70
2
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