TC51WHM516AXBN65 データシートの表示（PDF） - Toshiba

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TC51WHM516AXBN65

2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

Toshiba 

TC51WHM516AXBN65,70

Notes:

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(2)

(3)

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Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the

device.

All voltages are reference to GND.

IDDO depends on the cycle time.

IDDO depends on output loading. Specified values are defined with the output open condition.

AC measurements are assumed tR, tF = 5 ns.

Parameters tOD, tODO, tBD and tODW define the time at which the output goes the open condition and

are not output voltage reference levels.

Data cannot be retained at deep power-down stand-by mode.

If OE is high during the write cycle, the outputs will remain at high impedance.

During the output state of I/O signals, input signals of reverse polarity must not be applied.

If CE1 or LB / UB goes LOW coincident with or after WE goes LOW, the outputs will remain at high

impedance.

If CE1 or LB / UB goes HIGH coincident with or before WE goes HIGH, the outputs will remain at

high impedance.

2002-08-22 9/11

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