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TP0604WG データシートの表示(PDF) - Supertex Inc

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TP0604WG Datasheet PDF : 4 Pages
1 2 3 4
Thermal Characteristics
Package
TO-92
ID (continuous)*
-0.43A
ID (pulsed)
-4.2A
Power Dissipation
@ TC = 25°C
1W
θjc
°C/W
125
SOW-20
Refer to Enhancement Mode MOSFET Arrays Section
* ID (continuous) is limited by max rated Tj.
θja
°C/W
170
TP0604
IDR*
-0.43A
IDRM
-4.2A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
Conditions
BVDSS
VGS(th)
VGS(th)
IGSS
IDSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-40
V
-1.0
-2.4
V
-3.0 -4.5 mV/°C
-100
nA
-10
µA
-1.0
mA
ID(ON)
ON-State Drain Current
-0.4 -0.6
-2.0 -3.3
RDS(ON)
Static Drain-to-Source
ON-State Resistance
2.0
3.5
1.5
2.0
RDS(ON) Change in RDS(ON) with Temperature
0.75
1.2
GFS
Forward Transconductance
0.4
0.6
CISS
Input Capacitance
95 150
COSS
Common Source Output Capacitance
85 120
CRSS
Reverse Transfer Capacitance
35
60
td(ON)
Turn-ON Delay Time
5.0
8
tr
Rise Time
7.0
18
td(OFF)
Turn-OFF Delay Time
10
15
tf
Fall Time
6.0
19
VSD
Diode Forward Voltage Drop
-1.3 -2.0
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
%/°C
pF
ns
V
ns
VGS = 0V, ID = -2.0mA
VGS = VDS, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = -5V, VDS = -20V
VGS = -10V, VDS = -20V
VGS = -5V, ID = -250mA
VGS = -10V, ID = -1.0A
VGS = -10V, ID = -1.0A
VDS = -20V, ID = -1.0A
VGS = 0V, VDS = -20V
f = 1 MHz
VDD = -20V
ID = -1.0A
RGEN = 25
VGS = 0V, ISD = -1.5A
VGS = 0V, ISD = -1.5A
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
VDD
10%
t(ON)
td(ON)
tr
90%
t(OFF)
td(OFF)
tF
90%
90%
10%
10%
2
PULSE
GENERATOR
Rgen
INPUT
D.U.T.
OUTPUT
RL
VDD

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