180N10F3 データシートの表示（PDF） - STMicroelectronics

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180N10F3

N-channel 100 V, 4.0 mΩ, 120 A STripFET™ Power MOSFET D2PAK, TO-220

STMicroelectronics 

STB180N10F3 - STP180N10F3

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

Source-drain current

Source-drain current

(pulsed)

VSD(2) Forward on voltage

ISD=120 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=120 A,

di/dt = 100 A/µs,

VDD=30 V, Tj=150°C

(see Figure 4)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

120 A

480 A

1.5

V

TBD

ns

TBD

µC

TBD

A

5/12

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