ME75N75T-G データシートの表示（PDF） - Unspecified

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ME75N75T-G

N- Channel 75-V (D-S) MOSFET

Unspecified 

N- Channel 75-V (D-S) MOSFET

ME75N75T / ME75N75T-G

Electrical Characteristics (TA =25℃ Unless Otherwise Specified)

Symbol

Parameter

Limit

Min Typ Max Unit

STATIC

BVDSS

VGS(th)

IGSS

IDSS

RDS(ON)

VSD

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

Drain-Source On-Resistance*

Diode Forward Voltage *

VGS=0V, ID=250μA

VDS=VGS, ID=250μA

VDS=0V, VGS=±25V

VDS=75V, VGS=0V

VGS=10V, ID=40A

IS=40A, VGS=0V

75

V

2.0

4.0

V

±100 nA

1

μA

8

10

mΩ

0.9

1.2

V

DYNAMIC

Qg

Total Gate Charge

VDD=60V, VGS=10V, ID=75A

112

Qg

Total Gate Charge

Qgs

Gate-Source Charge

28

nC

VDD=60V, VGS=4.5V, ID=75A

27

Qgd

Gate-Drain Charge

30

Rg

Gate Resistance

VDS=0V, VGS=0V, f=1MHz

0.9

Ω

Ciss

Input Capacitance

4900

Coss

Output Capacitance

VDS=20V, VGS=0V, f=1MHz

534

pF

Crss

Reverse Transfer Capacitance

175

td(on)

tr

td(off)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

VGS =10V, RL=15Ω

VDD=30V, RG=10Ω

48

36

ns

144

tf

Turn-Off Fall Time

48

Notes: a. pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.

b. Matsuki reserves the right to improve product design, functions and reliability without notice.

Apr, 2010-Ver1.0

02

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