FCPF400N60 データシートの表示（PDF） - Fairchild Semiconductor
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FCPF400N60 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 15.0V
10.0V
8.0V
10
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
5
10 15 20 25 30
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
1000
100
Coss
10 *Note:
1. VGS = 0V
Crss
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
VDS, Drain-Source Voltage [V]
1000
©2012 Fairchild Semiconductor Corporation
FCPF400N60 Rev. C3
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
1
3
4
5
6
7
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 5A
0
0
9
18
27
36
Qg, Total Gate Charge [nC]
3
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