ILD1 データシートの表示（PDF） - Infineon Technologies
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ILD1 Datasheet PDF : 4 Pages
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Characteristics
Emitter
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Leakage Current, Collector-Emitter
Saturation Voltage, Collector-Emitter
DC Forward Current Gain
Saturated DC Forward Current Gain
Thermal Resistance, Junction to Lead
Symbol Min. Typ. Max. Unit Condition
VF
IR
C0
RTHJL
1.25 1.65 V
IF=60 mA
0.01 10
µA
VR=6 V
25
pF
VR=0 V, f=1 MHz
750
°C/W
CCE
ICEO
VCESAT
HFE
200
HFESAT
120
RTHJL
6.8
5
0.25
650
400
500
50
0.4
1800
600
pF
nA
°C/W
VCE=5 V, f=1 MHz
VCE=10 V
ICE=1 mA, IB=20 µA
VCE= 10 V, IB=20 µA
VCE= 0.4 V, IB=20 µA
Package Transfer Characteristics (Each Channel)
Symbol
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
ILD/Q2
CTRCESAT
CTRCE
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
ILD/Q5
CTRCESAT
CTRCE
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
Isolation and Insulation
CTRCESAT
CTRCE
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
CMH
CML
CCM
CIO
Min.
20
100
50
Typ. Max. Unit Condition
75
%
IF=10 mA, VCE=0.4 V
90
300
%
IF=10 mA, VCE=10 V
170
%
200
500
%
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
100
%
130
400
%
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE =10 V
5000
5000
0.01
0.8
V/µs
V/µs
pF
pF
VCM=50 VP-P, RL=1 kΩ, IF=0 mA
VCM=50 VP-P, RL=1 kΩ, IF=10 mA
VIO=0 V, f=1 MHz
ILD/Q1/2/5
5–2
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