5STP38N4200 データシートの表示（PDF） - ABB
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5STP38N4200 Datasheet PDF : 6 Pages
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On-state
Maximum rated values 1)
Parameter
Max. average on-state
current
RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Symbol Conditions
ITAVM Half sine wave, Tc = 70°C
ITRMS
ITSM
I2t
ITSM
I2t
tp = 10 ms, Tj = 125°C,
VD=VR = 0 V
tp = 8.3 ms, Tj = 125°C,
VD=VR=0 V
Symbol Conditions
VT
IT = 3000 A, Tj= 125°C
VT0
IT = 2500 A - 7500 A, Tj= 125°C
rT
Tj = 125°C
IH
Tj = 25°C
Tj = 125°C
IL
Tj = 25°C
Tj = 125°C
5STP 38N4200
min typ
min typ
max Unit
3960
A
6230
A
60000 A
18000
65000
kA2s
A
17500 kA2s
max
1.35
0.95
0.13
100
75
500
350
Unit
V
V
mΩ
mA
mA
mA
mA
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
di/dtcrit
di/dtcrit
Tj = 125°C, ITRM = 5000 A,
VD ≤ 0.67⋅VDRM,
IFG = 2 A, tr = 0.5 µs
Cont.
f = 50 Hz
Cont.
f = 1Hz
Circuit-commutated turn-off tq
time
Tj = 125°C, ITRM = 5000 A,
VR = 200 V, diT/dt = -5 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
Characteristic values
Parameter
Symbol Conditions
600
min typ
Recovery charge
Qrr
Tj = 125°C, ITRM = 5000 A,
VR = 200 V, diT/dt = -5 A/µs
5000
Delay time
td
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
max Unit
250 A/µs
1000 A/µs
µs
max Unit
10000 µAs
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02
page 2 of 6
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