2SC5416 データシートの表示（PDF） - Inchange Semiconductor

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2SC5416

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5416

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

450

V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4 A

1.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IC=2A; IB=0.4 A

VCB=450V; IE=0

1.5

V

10 μA

ICES

Collector cut-off current

VCE=1000V; RBE=0

1.0 mA

IEBO

Emitter cut-off current

VEB=9V; IC=0

1.0 mA

hFE-1

DC current gain

IC=0.1A ; VCE=5V

30

50

固IN电C半H导AN体GE SEMICONDUTOR hFE-2

DC current gain

Switching times

ts

Storage time

tf

Fall time

IC=1.5A ; VCE=5V

IC=2A;IB1=0.4A ;IB2=-0.8A

10

2.5

0.15

μs

μs

2

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