2SD2553 データシートの表示（PDF） - SavantIC Semiconductor

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2SD2553

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2553

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IC=400mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A

VBEsat

Base-emitter saturation voltage

IC=6A; IB=1.2A

ICBO

Collector cut-off current

VCB=1200V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

VF

Diode forward voltage

IF=8A

Cob

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

fT

Transition frequency

IC=0.1A ; VCE=10V

Switching times :

ts

Storage time

tf

Fall time

ICP=6A;IB1=1.5A

fH =15.75kHz

MIN TYP. MAX UNIT

5

V

5

V

0.9

1.2

V

1

mA

66

200

mA

8

28

5

9

1.6

2.0

V

155

pF

2

MHz

9

12

µs

0.3

0.7

µs

2

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