BCR16CM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
—
On-state voltage
VTM
—
Gate trigger voltageNote2
VFGT
—
VRGT
—
VRGT
—
Gate trigger currentNote2
IFGT
—
IRGT
—
IRGT
—
—
2.0
mA Tj = 150C, VDRM applied
—
1.5
V Tc = 25C, ITM = 25 A,
Instantaneous measurement
—
1.5
V Tj = 25C, VD = 6 V, RL = 6 ,
—
1.5
V
RG = 330
—
1.5
V
—
30Note6 mA Tj = 25C, VD = 6 V, RL = 6 ,
—
30Note6
mA
RG = 330
—
30Note6
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
VGD
0.2/0.1
—
Rth (j-c)
—
—
(dv/dt)c 10/1
—
—
V
Tj = 125C/150C, VD = 1/2 VDRM
1.4
C/W Junction to caseNote3 Note4
—
V/s Tj = 125C/150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
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