SVF5N60F データシートの表示（PDF） - Silan Microelectronics
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SVF5N60F Datasheet PDF : 10 Pages
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SVF5N60T/F/D/MJ_Datasheet
5A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF5N60T/F/D/MJ is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF5N60T
SVF5N60F
SVF5N60D
SVF5N60DTR
SVF5N60MJ
Package
TO-220-3L
TO-220F-3L
TO-252-2L
TO-252-2L
TO-251J-3L
Marking
SVF5N60T
SVF5N60F
SVF5N60D
SVF5N60D
SVF5N60MJ
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.13
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