SVF5N60T データシートの表示（PDF） - Silan Microelectronics
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SVF5N60T Datasheet PDF : 10 Pages
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SVF5N60T/F/D/MJ_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS
Integral Reverse P-N
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD
IS=5.0A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr
IS=5.0A,VGS=0V,
Qrr
dIF/dt=100A/µs
Notes:
1. L=30 mH, IAS=3.78A, VDD=70V, RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ.
--
--
Max.
5
20
Unit
A
--
--
1.4
V
--
190
--
ns
-- 0.53 --
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.13
Page 3 of 10
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