STP4NA80FI データシートの表示（PDF） - STMicroelectronics
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STP4NA80FI Datasheet PDF : 10 Pages
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STP4NA80/FI
THERMAL DATA
Rthj-case
Rthj-amb
Rt h c- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.13
ISOWATT220
2.77
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
4
80
3.1
2.5
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ.
Max.
Unit
V
250 µA
1000 µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2 A
Resistance
VGS = 10V ID = 2 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
4
Typ.
3
2.4
Max.
3.75
3
6
Unit
V
Ω
Ω
A
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
2.5
Typ.
4.3
Max.
Unit
S
955 1350 pF
105 150 pF
24
35
pF
2/10
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