2SD1220 データシートの表示（PDF） - TY Semiconductor

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2SD1220

Silicon NPN Epitaxial Type (PCT Process) Transistor

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SD1220

Features

Power Amplifier Applications

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

1 Base

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation Ta = 25

Tc = 25

Junction temperature

Storage temperature range

Symbol

Rating

Unit

VCBO

150

V

VCEO

150

V

VEBO

6

V

IC

1.5

A

IB

1

A

1

PC

W

10

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

V (BR) CEO

hFE

VCE (sat)

VBE

fT

Cob

Testconditons

VCB = 150 V, IE = 0

VEB = 6 V, IC = 0

IC = 10 mA, IB = 0

VCE = 5 V, IC = 200 mA

IC = 500 mA, IB = 50 mA

VCE = 5 V, IC = 5 mA

VCE = 5 V, IC = 200 mA

VCB = 10 V, IE = 0, f = 1 MHz

Min Typ Max Unit

1.0 ìA

1.0 ìA

150

V

60

320

1.5 V

0.5

0.8 V

20 100

MHz

13 20 pF

hFE Classification

Marking

Rank

hFE

R

60 to 120

D1220

O

100 to 200

Y

160 to 320

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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