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2SK1581C データシートの表示(PDF) - Renesas Electronics

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2SK1581C
Renesas
Renesas Electronics Renesas
2SK1581C Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Preliminary Data Sheet
2SK1581C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1287EJ0200
Rev.2.00
Jul 24, 2015
Description
The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 2.5 V power source.
Features
Directly driven by a 2.5 V power source.
Low on-state resistance
RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.3 A)
RDS(on)2 = 0.60 MAX. (VGS = 4.0 V, ID = 0.3 A)
RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK1581C-T1B-A/AT
-A:Sn-Bi , -AT:Pure Sn
3000p/Reel
SC-59 (3pMM)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XL
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW 10 s, Duty Cycle 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
20
V
12
V
500
mA
2
A
200
mW
150
C
55 to 150
C
R07DS1287EJ0200 Rev.2.00
Jul 24, 2015
Page 1 of 5

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