HMC262 データシートの表示（PDF） - Hittite Microwave

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HMC262

GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz

Hittite Microwave 

v01.0500

MICROWAVE CORPORATION

HMC262

GaAs MMIC LOW NOISE

AMPLIFIER, 15 - 24 GHz

Absolute Maximum Ratings

Supply Voltage (Vdd)

(Vdd = V1 = V2 = V3)

Input Power (RFin) (Vdd= +3V)

Channel Temperature (Tc)

Thermal Resistance ( jc)

(Channel Backside)

Storage Temperature

Operating Temperature

+5.5 Vdc

-5 dBm

175 °C

90 °C/W

-65 to +150 °C

-55 to +85 °C

Schematic

Vdd (+3V to +5V)

1

V1 V2 V3

RF IN

RF OUT

Ground

(Backside)

NOTE: Connect V1, V2, & V3 to Vdd via a 100pF single layer

chip bypass capacitor. Place the capcacitor no further than

0.762 mm (30 mils) from the HMC262. M1 & M2 are to

remain open circuit (no connection).

Outline Drawing (See Die Handling, Mounting, Bonding Note)

RF IN

RF OUT

ALL DIMENSION IN MILLIMETERS (INCHES)

ALL TOLERANCES ARE ±0.025 (0.001)

DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND

BOND PADS ARE 0.100 (0.004) SQUARE

BOND PAD SPACING, CTR-CTR: 0.150 (0.006)

BACKSIDE METALLIZATION: GOLD

BOND PAD METALLIZATION: GOLD

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at sales@hittite.com

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