HMC262 データシートの表示（PDF） - Hittite Microwave
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HMC262 Datasheet PDF : 6 Pages
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v01.0500
MICROWAVE CORPORATION
HMC262
GaAs MMIC LOW NOISE
AMPLIFIER, 15 - 24 GHz
MMIC Assembly Techniques for HMC262
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general
Handling, Mounting, Bonding Note.)
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin film substrates must be used,
the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the sub-
strate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybde-
num heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bod wire length. Typi-
cal die-to-substrate spacing is 0.076 mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically
or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip is recommended.
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