HN58X25128 データシートの表示（PDF） - Renesas Electronics
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HN58X25128
Renesas Electronics
HN58X25128 Datasheet PDF : 21 Pages
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HN58X25128FPIAG/HN58X25256FPIAG
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
VCC
−0.6 to + 7.0
V
Vin
−0.5*2 to +7.0
V
Topr
−40 to +85
°C
Storage temperature range
Tstg
−55 to +125
°C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): −3.0 V for pulse width ≤ 50 ns.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.8
⎯
5.5
V
VSS
0
0
0
V
Input voltage
VIH
VCC × 0.7
⎯
VCC + 0.5
V
VIL
−0.3*1
⎯
VCC × 0.3
V
Operating temperature range
Topr
−40
⎯
+85
°C
Note: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns.
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Symbo Min
Typ
Max
Unit
Test conditions
l
Input capacitance (D,C, S, W ,HOLD)
Cin*1
⎯
⎯
6.0
pF Vin = 0 V
Output capacitance (Q)
CI/O*1
⎯
⎯
8.0
pF Vout = 0 V
Note: 1.Not 100% tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100% tested.
Ta=25°C
1,000k Cycles min.
100 Years min.
Ta=85°C
100k Cycles min
10 Years min.
(VCC = 1.8 V to 5.5 V)
Notes
1
1
R10DS0225EJ0200 Rev.2.00
Nov 29, 2013
Page 3 of 19
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