HN58X25128FPIAG データシートの表示（PDF） - Renesas Electronics

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HN58X25128FPIAG

Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit)/256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Renesas Electronics 

HN58X25128IAG/HN58X25256IAG

DC Characteristics

Parameter

Input leakage current

Symbol

Min

ILI



Output leakage current

ILO



VCC current

Standby

ISB



Active

ICC1





Output voltage

ICC2

VOL1

VOL2

VOH1

VOH2









VCC × 0.8

VCC × 0.8

Max

2

2

3

2.5

4

2.5

4

0.4

0.4





Unit

µA

µA

µA

mA

mA

mA

mA

V

V

V

V

Test conditions

VCC = 5.5 V, VIN = 0 to 5.5 V

(S, D, C, HOLD, W)

VCC = 5.5 V, VOUT = 0 to 5.5 V

(Q)

VIN = VSS or VCC,

VCC = 5.5 V

VCC = 3.6 V, Read at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

Q = OPEN

VCC = 5.5 V, Read at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

Q = OPEN

VCC = 3.6 V, Write at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

VCC = 5.5 V, Write at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

VCC = 5.5 V, IOL = 2 mA

VCC = 2.5 V, IOL = 1.5 mA

VCC = 5.5 V, IOL = −2 mA

VCC = 2.5 V, IOL = −0.4 mA

Rev.1.00, Nov.30.2006, page 4 of 20

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