BUT11A データシートの表示（PDF） - Nell Semiconductor Co., Ltd

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BUT11A

High Voltage Fast-switching NPN Power Transistor 5A/450V

Nell Semiconductor Co., Ltd 

SEMICONDUCTOR

BUT11A Series RRooHHSS

Nell High Power Products

Fig.6 VBE(sat)·VCE(sat) - IC Temperature

characteristics (Typical)

2.0

lC/IB = 5

1.5

1.0

TJ = 25°C

(1)

0.5

0

0.01

V BE

TJ = 100°C

V CE

TJ = 100°C

(4) TJ = 25°C

0.1

1

10

Collector current , lC (A)

1.6

TJ = 25°C

1.4

1.2

1.0

Fig.7 VBE - IB Characteristics

IC = 6A

IC = 8A

IC = 3A

0.8

0

0.25

0.5

0.75

1.0

1.25

1.5

Base current, IB (A)

Fig.8 VCE(sat) - IB Characteristics (Typical)

10

TJ = 25°C

1

IC=1.5A IC=3A IC=5A

Fig.9 DC current gain

2

10

VCE = 5V

1V

10

-1

10

-2

10

-1

10

1

Base current, IB (A)

www.nellsemi.com

1

10

-2

-1

10

10

1

2

10

10

Collector current, lC (A)

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