2SJ596 データシートの表示（PDF） - SANYO -> Panasonic

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2SJ596

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ596

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta=25°C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Marking : J596

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=--1mA, VGS=0

VDS=--60V, VGS=0

VGS=±16V, VDS=0

VDS=--10V, ID=--1mA

VDS=--10V, ID=--4A

ID=--4A, VGS=--10V

ID=--2A, VGS=--4V

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

VDS=--10V, VGS=--10V, ID=--8A

VDS=--10V, VGS=--10V, ID=--8A

VDS=--10V, VGS=--10V, ID=--8A

IS=--8A, VGS=0

Switching Time Test Circuit

VIN

0V

--10V

PW=10µs

D.C.≤1%

VIN

G

VDD= --30V

ID= --4A

RL=7.5Ω

D

VOUT

P.G

50Ω

2SJ596

S

Ratings

Unit

--60

V

±20

V

--8

A

--32

A

1

W

20 W

150 °C

--55 to +150 °C

Ratings

Unit

min

typ

max

--60

V

--10

µA

±10

µA

--1.0

--2.4

V

5

7

S

110

145 mΩ

155

220 mΩ

680

pF

170

pF

50

pF

10

ns

30

ns

75

ns

35

ns

22

nC

4

nC

5

nC

--0.9

--1.2

V

No.6979-2/4

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