Q67000-S063 データシートの表示（PDF） - Infineon Technologies

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Q67000-S063

SIPMOS® Small-Signal Transistor

Infineon Technologies 

SN 7002

Maximum Ratings

Parameter

Symbol

Chip or operating temperature

Tj

Storage temperature

Tstg

Thermal resistance, chip to ambient air

RthJA

Therminal resistance, chip-substrate- reverse side 1)RthJSR

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 350

K/W

≤ 285

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

60

-

-

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA

0.8

1.4

2

Zero gate voltage drain current

IDSS

VDS = 60 V, VGS = 0 V, Tj = 25 °C

-

0.1

1

VDS = 60 V, VGS = 0 V, Tj = 125 °C

-

-

5

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V

-

1

10

Drain-Source on-state resistance

RDS(on)

VGS = 10 V, ID = 0.5 A

-

2

5

VGS = 4.5 V, ID = 0.05 A

-

3

7.5

Unit

V

µA

nA

Ω

Semiconductor Group

2

Sep-13-1996

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