Q67000-S063 データシートの表示（PDF） - Infineon Technologies
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Q67000-S063 Datasheet PDF : 8 Pages
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SN 7002
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.5 A, VGS = 10 V
16
Ω
RDS (on)
12
10
8
98%
6
4
2
0
-60
-20
typ
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
2.8
2.4
98%
2.0
1.6
typ
1.2
2%
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 0
pF
C
10 2
A
I
F
10 -1
Ciss
10 1
Coss
Crss
10 0
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 -2
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -3
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Sep-13-1996
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