MTP10N10E データシートの表示（PDF） - ON Semiconductor
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MTP10N10E Datasheet PDF : 8 Pages
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MTP10N10E
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = 0.8 Rated VDSS, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
TJ = 100°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
Drain–Source On–Voltage (VGS = 10 V)
(ID = 10 Adc)°
(ID = 5.0 Adc, TJ = 100°C)
Forward Transconductance (VDS = 15 V, ID = 5.0 A)
DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Unclamped Drain–to–Source Avalanche Energy See Figures 14 and 15
(ID = 25 A, VDD = 25 V, TC = 25°C, Single Pulse, Non–repetitive)
(ID = 10 A, VDD = 25 V, TC = 25°C, P.W. ≤ 200 µs, Duty Cycle ≤ 1%)
(ID = 4.0 A, VDD = 25 V, TC = 100°C, P.W. ≤ 200 µs, Duty Cycle ≤ 1%)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
See Figure 16
SWITCHING CHARACTERISTICS (Note 1.) (TJ = 100°C)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 25 V, ID = 5.0 A,
RG = 50 Ω)
See Figure 9
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = 0.8 Rated VDSS,
ID = Rated ID, VGS = 10 V)
See Figures 17 and 18
SOURCE–DRAIN DIODE CHARACTERISTICS (Note 1.)
Forward On–Voltage
Forward Turn–On Time
Reverse Recovery Time
(IS = Rated ID
VGS = 0)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)″
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Symbol
Min
Max
Unit
V(BR)DSS
100
IDSS
–
–
IGSSF
–
IGSSR
–
VGS(th)
2.0
1.5
RDS(on)
–
VDS(on)
–
–
gFS
4.0
WDSR
–
–
–
–
Vdc
µA
10
80
100
nAdc
100
nAdc
Vdc
4.5
4.0
0.25
Ohm
Vdc
2.7
2.4
–
mhos
mJ
60
100
40
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
Ld
Ls
–
600
pF
–
400
–
100
–
50
ns
–
80
–
100
–
80
15 (Typ)
30
nC
8.0 (Typ)
–
7.0 (Typ)
–
1.4 (Typ) 1.7
Vdc
Limited by stray inductance
70 (Typ)
–
ns
nH
3.5 (Typ)
–
4.5 (Typ)
–
7.5 (Typ)
–
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