MTP10N10E データシートの表示（PDF） - ON Semiconductor
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MTP10N10E Datasheet PDF : 8 Pages
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MTP10N10E
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 10 V
8V
16
TJ = 25°C
7V
12
6V
8
5V
4
4V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
20
TJ = -55°C
16
VDS = 10 V
VDS = 15 V
12
100°C
8
4
+25°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
0.5
VGS = 10 V
0.4
0.3
TJ = 100°C
0.2
25°C
-55°C
0.1
0
2
4
6
8
10
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
1.2
VDS = VGS
1.1
ID = 1 mA
1
0.9
0.8
0.7
-50 -25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
2
1.6
VGS = 0 V
ID = 0.25 mA
1.2
0.8
0.4
0
-50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Breakdown Voltage Variation
With Temperature
2
1.6
VGS = 10 V
ID = 5 mA
1.2
0.8
0.4
0
-50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On–Resistance Variation
With Temperature
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