SBP13009-S データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd

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SBP13009-S

High Voltage Fast-Switching NPN Power Transistor

Shenzhen Winsemi Microelectronics Co., Ltd 

SBP13009-S

High Voltage Fast-Switching NPN Power Transistor

Features

� Very High Switching Speed

� High Voltage Capability

� Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

Switching characteristics required such as lighting

system,switching mode power supply.

Absolute Maximum Ratings

Symbol

Parameter

VCES

Collector -Emitter Voltage

VCEO

Collector -Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

ICP

Collector pulse Current

IB

Base Current

IBM

Base Peak Current

Total Dissipation at Tc*=25℃

PC

Total Dissipation at Ta*=25℃

TJ

Operation Junction Temperature

TSTG

Storage Temperature

Tc :Case temperature (good cooling)

Ta :Ambient temperature (without heat sink)

Thermal Characteristics

Symbol

Parameter

RӨJC

Thermal Resistance Junction to Case

RӨJA

Thermal Resistance Junction to Ambient

Test Conditions

VBE=0

IB=0

IC=0

tP=5ms

Value

700

400

9.0

12

25

6.0

12

100

2.2

-40~150

-40~150

Units

V

V

V

A

A

A

A

W

℃

℃

Value

1.25

40

Units

℃/W

℃/W

Rev.A Aug.2010

Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.

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