BC556(2003) データシートの表示（PDF） - Diotec Semiconductor Germany
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BC556 Datasheet PDF : 2 Pages
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General Purpose Transistors
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung
- IC = 100 mA, - IB = 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- VBEsat
- VCE = 5 V, - IC = 2 mA
- VBE
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 60 V
BC 556
- VCE = 40 V
BC 557
- VCE = 25 V
BC 558
- VCE = 25 V
BC 559
Gain-Bandwidth Product – Transitfrequenz
- ICE0
- ICE0
- ICE0
- ICE0
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A
RG = 2 kS f = 1 kHz,
)f = 200 Hz
CEB0
BC 556...
F
BC 558
BC 559 F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 556 ... BC 559
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
1V
580 mV 660 mV 700 mV
–
–
0.1 :A
–
–
0.1 :A
–
–
0.1 :A
–
–
0.1 :A
150 MHz
–
–
–
–
6 pF
–
9 pF
–
–
2 dB
10 dB
–
1 dB
4 dB
RthA
200 K/W 1)
BC 546 ... BC 549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 556A
BC 557A
BC 558A
BC 556B
BC 557B
BC 558B
BC 559B
BC 557C
BC 558C
BC 559C
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
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