BC879 データシートの表示（PDF） - Infineon Technologies

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BC879

NPN Silicon Darlington Transistors

Infineon Technologies 

DC current gain hFE = f (IC)

VCE = 10 V, TA = 25 ˚C

BC 875

… BC 879

Transition frequency fT = f (IC)

VCE = 5 V, f = 20 MHz

Collector-emitter saturation voltage

VCEsat = f (IC)

Parameter = IB, TA = 25 ˚C

Base-emitter saturation voltage

VBEsat = f (IC)

Parameter = IB, TA = 25 ˚C

Semiconductor Group

4

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