EPA720A データシートの表示（PDF） - Excelics Semiconductor, Inc.
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EPA720A Datasheet PDF : 2 Pages
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Excelics
EPA720A
DATA SHEET
High Efficiency Heterojunction Power FET
• +37.5dBm TYPICAL OUTPUT POWER
• 19.0dB TYPICAL POWER GAIN AT 2GHz
• 0.4 X 7200 MICRON RECESSED
'
'
'
“MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
6
*
6
*
6
*
6
• Idss SORTED IN 180mA PER BIN RANGE
Chip Thickness: 50 ± 10 microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
36.0 37.5
37.5
dBm
G1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
17.5 19.0
dB
f= 4GHz
14.0
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
%
52
Idss
Saturated Drain Current Vds=3V, Vgs=0V
1320 2160 2820 mA
Gm
Transconductance
Vds=3V, Vgs=0V
1440 2280
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=22mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=7.2mA
-11 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=7.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
6
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
1.6A
Igsf
Forward Gate Current
360mA
60mA
Pin
Input Power
35dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
23 W
19 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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