AMMP-5618 データシートの表示（PDF） - Agilent Technologies, Inc
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AMMP-5618 Datasheet PDF : 9 Pages
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AMMP-5618 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
Id
Drain Supply Current (under any RF power drive and temperature) (Vd=5.0V)
mA
107
140
θch-b
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
°C/W
34
Notes:
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb)
= 25°C calculated from measured data.
RF Specifications[3,4,6] (TA= 25°C, Vd= 5.0V, Id(Q)= 107 mA, Zo=50 Ω)
Symbol
Parameters and Test Conditions
Units
Typ.
Sigma
Gain
Small-signal Gain[5]
dB
13
0.4
NF
Noise Figure into 50Ω[5]
dB
4.4
0.2
P-1dB
Output Power at 1 dB Gain Compression
dBm
+19
0.9
OIP3
Third Order Intercept Point;
∆f = 100 MHz; Pin = -20 dBm
dBm
+30
1.2
RLin
Input Return Loss
dB
-12
0.7
RLout
Output Return Loss
dB
-12
0.6
Isol
Reverse Isolation
dB
-40
1.2
Notes:
3. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
4. Pre-assembly into package performance verified 100% on-wafer per AMMC-5618 published specifications
5. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
6. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a more narrow
bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.
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