BD434 データシートの表示（PDF） - Inchange Semiconductor
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BD434 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD434/436/438
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat
Collector-emitter
saturation voltage
BD434/436
BD438
IC=-2A; IB=-0.2A
-0.5
-0.2
V
-0.6
BD434/436
VBE
Base-emitter on voltage
IC=-2A ; VCE=-1V
BD438
-1.1
V
-1.2
BD434
-22
VCEO(SUS)
Collector-emitter
sustaining voltage
BD436
IC=-0.1A; IB=0
-32
V
BD438
-45
BD434
ICES
Collector cut-off current BD436
VCB=-22V; IE=0
VCB=-32V; IE=0
-100 μA
BD438
VCB=-45V; IE=0
BD434
体 ICES
Collector cut-off current BD436
VCE=-22V; VBE=0
VCE=-32V; VBE=0
固I电NC半H导ANGE SEMICONDUCTOR BD438
VCE=-45V; VBE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
BD434/436
40
hFE-1
DC current gain
IC=-10mA ; VCE=-5V
BD438
30
hFE-2
DC current gain
IC=-0.5A ; VCE=-1V
85
-100
-1
130
140
μA
mA
BD434/436
50
hFE-3
DC current gain
IC=-2A ; VCE=-1V
BD438
40
fT
Transition frequency
IC=-250mA; VCE=-1V
3
MHz
2
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