BD533 データシートの表示（PDF） - Continental Device India Limited
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BD533 Datasheet PDF : 3 Pages
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BD533, BD535, BD537
BD534, BD536, BD538
Base current
IB
Total power dissipation up to TC = 25°C Ptot
Junction temperature
Tj
Storage temperature
Tstg
THERMAL RESISTANCE
From junction to case
From junction to ambient
Rth j–c
Rth j–a
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 45 V
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
VBE = 0; VCE = 45V
VBE = 0; VCE = 60V
VBE = 0; VCE = 80V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 2.0 A; IB = 0.2 A
IC = 6.0 A; IB = 0.6 A
Base-emitter on voltage
IC = 2A; VCE = 2V
D.C. current gain
IC = 10mA; VCE = 5V
IC = 500mA; VCE = 2V
IC = 2A; VCE = 2V
Transition frequency
IC = 500 mA; VCE = 1V
hFE Groups:
IC = 2A; VCE = 2V
ICBO
ICBO
ICBO
ICES
ICES
ICES
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VCEsat*
VBE(on)*
hFE*
hFE*
hFE*
fT
J
IC = 3A; VCE = 2V
IC = 2A; VCE = 2V
K
IC = 3A; VCE = 2V
* Pulsed: pulse duration = 300 µs; duty cycle = 1.5%.
max.
1.0
A
max.
50
W
max.
150
°C
–65 to +150
ºC
2.5
°C/W
70
°C/W
533 535 537
534 536 538
max. 100 – – µA
max. – 100 – µA
max. – – 100 µA
max. 100 – – µA
max. – 100 – µA
max. – – 100 µA
max.
1.0
mA
min. 45
min. 45
min.
60 80 V
60 100 V
5.0
V
max.
0.8
V
typ.
0.8
V
max.
1.5
V
min. 20 20 15
min.
40
min. 25 25 15
min.
3.0
MHz
min.
30
max.
75
min.
15
min.
40
max.
100
min.
20
Continental Device India Limited
Data Sheet
Page 2 of 3
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